Integra Technologies Introduces Industry-First Single-Device 10 kW High Voltage GaN/SiC Transistor for L-Band
Integra Technologies announced the industry’s first single High Voltage GaN on Silicon Carbide (HV GaN/SiC) 150 V transistor.
Integra Technologies announced the industry’s first single High Voltage GaN on Silicon Carbide (HV GaN/SiC) 150 V transistor.
Junkosha has announced the shortlist of six candidates for its third Technology Innovator of the Year Award.
This week, at ITF World, imec, presents a world first: a quantum dot qubit device fabricated using High NA EUV lithography.